Peaked nature of excitonic absorption in quantum-well wires of indirect-gap semiconductors

Partha Ray and P. K. Basu
Phys. Rev. B 48, 11420 – Published 15 October 1993
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Abstract

We have developed a theory of optical absorption in quantum-well wires made from indirect-gap semiconductors, such as Si/Si1xGex, in which the final state is the 1s excitonic state in the lowest conduction subband. The momentum conservation is due to phonons. It is found that the absorption spectra reproduce the density-of-states function for one-dimensional systems, i.e., show a singularity at threshold in the ideal case. Calculations using a Lorentzian broadening indicate that the peak absorption is larger than the constant absorption in quantum wells and the ratio is enhanced when the wire size is about 10 Å.

  • Received 3 June 1993

DOI:https://doi.org/10.1103/PhysRevB.48.11420

©1993 American Physical Society

Authors & Affiliations

Partha Ray and P. K. Basu

  • Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Calcutta 700 009, India

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Vol. 48, Iss. 15 — 15 October 1993

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