Model dielectric function for semiconductors

G. Cappellini; R. Del Sole; Lucia Reining; F. Bechstedt

doi:10.1103/PhysRevB.47.9892

Model dielectric function for semiconductors

G. Cappellini, R. Del Sole, Lucia Reining, and F. Bechstedt

Phys. Rev. B 47, 9892 – Published 15 April 1993; Erratum Phys. Rev. B 48, 11520 (1993)

Abstract

We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmon-energy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.

Received 7 December 1992

DOI:https://doi.org/10.1103/PhysRevB.47.9892

Erratum

Erratum: Model dielectric function for semiconductors

G. Cappellini, R. Del Sole, Lucia Reining, and F. Bechstedt

Phys. Rev. B 48, 11520 (1993)

Authors & Affiliations

G. Cappellini and R. Del Sole

Dipartimento di Fisica, Universita` di Roma ‘‘Tor Vergata,’’ via della Ricerca Scientifica 1, I-00133 Roma, Italy

Lucia Reining

Centre de Calcul Atomique et Mole´culaire, Universite´ Paris-Sud, Ba^timent 506, 91405 Orsay, France

F. Bechstedt

Physikalisch-Astronomische Fakulta¨t, Friedrich-Schiller Universita¨t, Max-Wien-Platz 1, D-6900 Jena, Germany

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Vol. 47, Iss. 15 — 15 April 1993

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covering condensed matter and materials physics