Order-disorder c(4×2)-(2×1) transition on Ge(001): An in situ x-ray scattering study

C. A. Lucas, C. S. Dower, D. F. McMorrow, G. C. L. Wong, F. J. Lamelas, and P. H. Fuoss
Phys. Rev. B 47, 10375 – Published 15 April 1993
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Abstract

Using in situ x-ray diffraction, we have studied the order-disorder phase transition on the Ge(001) surface by measuring the temperature dependence of a superlattice reflection specific to the c(4×2) low-temperature phase. The results indicate that the transition corresponds to a two-dimensional phase transition with anisotropic interaction energies along and perpendicular to the dimer rows that form the (2×1) surface. Due to pinning of the c(4×2) domains by defects, we are unable to observe any universal critical behavior. The results indicate that the number of buckled dimers involved in the c(4×2) reconstruction is conserved through the transition. This implies that above room temperature the (2×1) surface consists of a random array of buckled dimers.

  • Received 3 December 1992

DOI:https://doi.org/10.1103/PhysRevB.47.10375

©1993 American Physical Society

Authors & Affiliations

C. A. Lucas

  • Materials Science Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

C. S. Dower

  • Department of Physics, University of Edinburgh, Edinburgh EH9 3JZ, United Kingdom

D. F. McMorrow

  • Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kindgom

G. C. L. Wong

  • Materials Science Division, Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
  • Department of Physics, University of California, Berkeley,California 94720

F. J. Lamelas and P. H. Fuoss

  • AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

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Vol. 47, Iss. 16 — 15 April 1993

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