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Spin-relaxation processes in ZnSe-based spin superlattices: A photoluminescence study

W. C. Chou, A. Petrou, J. Warnock, and B. T. Jonker
Phys. Rev. B 46, 4316(R) – Published 15 August 1992
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Abstract

We have studied the spin-relaxation process in spin superlattice structures, both at zero field (no confining potential) and as a function of applied field (variable confining potential). Evidence of an unexpectedly long hole spin-relaxation time associated with the strain splitting of the valence band has been found. In addition, excitonic spin-relaxation times which are unaffected by the strength of the spin-dependent confining potential were observed. We demonstrate that for excitons, spin flip via the magnetic ion-carrier exchange interaction is not the dominant spin-relaxation mechanism, although it may play a more important role in the case of energetic hot carriers.

  • Received 22 April 1992

DOI:https://doi.org/10.1103/PhysRevB.46.4316

©1992 American Physical Society

Authors & Affiliations

W. C. Chou and A. Petrou

  • Department of Physics and Astronomy and Center for Electronic Electro-optic Materials, State University of New York at Buffalo, Buffalo, New York 14260

J. Warnock

  • IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

B. T. Jonker

  • Naval Research Laboratory, Washington, D.C. 20375-5000

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Vol. 46, Iss. 7 — 15 August 1992

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