Two reaction channels directly observed for atomic hydrogen on the Si(111)-7×7 surface

K. Mortensen, D. M. Chen, P. J. Bedrossian, J. A. Golovchenko, and F. Besenbacher
Phys. Rev. B 43, 1816 – Published 15 January 1991
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Abstract

Using scanning tunneling microscopy and spectroscopy, we have investigated the reaction of atomic hydrogen with the Si(111)-7×7 reconstructed surface. A simple picture evolves in which the reaction proceeds concurrently along two channels: a direct binding of the hydrogen atoms to the existing dangling bonds of the surface, and a slower removal of the uppermost Si layer and binding of the hydrogen atoms to the created dangling bonds of the next layer.

  • Received 12 June 1990

DOI:https://doi.org/10.1103/PhysRevB.43.1816

©1991 American Physical Society

Authors & Affiliations

K. Mortensen

  • Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
  • Department of Physics, Harvard University, Cambridge, Massachusetts 02138
  • The Rowland Institute for Science, 100 Cambridge Parkway, Cambridge, Massachusetts 02142

D. M. Chen, P. J. Bedrossian, and J. A. Golovchenko

  • Department of Physics, Harvard University, Cambridge, Massachusetts 02138
  • The Rowland Institute for Science, 100 Cambridge Parkway, Cambridge, Massachusetts 02142

F. Besenbacher

  • Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark

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Vol. 43, Iss. 2 — 15 January 1991

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