Comment on ‘‘Effect of biaxial strain on acceptor-level energies in <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">In</mi></mrow><mrow><mi mathvariant="italic">y</mi></mrow></msub></mrow></math><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">y</mi></mrow></msub></mrow></math>As/<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="italic">x</mi></mrow></msub></mrow></math><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">x</mi></mrow></msub></mrow></math>As (on GaAs) quantum wells’’

Lucio Claudio Andreani; Samuele Fraizzoli; Alfredo Pasquarello

doi:10.1103/PhysRevB.42.7641

Comment on ‘‘Effect of biaxial strain on acceptor-level energies in ${In}_{y}$ ${Ga}_{1 - y}$ As/ ${Al}_{x}$ ${Ga}_{1 - x}$ As (on GaAs) quantum wells’’

Lucio Claudio Andreani, Samuele Fraizzoli, and Alfredo Pasquarello

Phys. Rev. B 42, 7641 – Published 15 October 1990

Abstract

In a recent paper on acceptors in strained quantum wells [J. P. Loehr and J. Singh, Phys. Rev. B 41, 3695 (1990)], a splitting between the two spin states is found when the impurity is placed off center. We point out that this splitting is inconsistent with symmetry and show that the error arises from an incorrect treatment of the transformation properties of the valence envelope functions.

Received 1 May 1990

DOI:https://doi.org/10.1103/PhysRevB.42.7641

Authors & Affiliations

Lucio Claudio Andreani and Samuele Fraizzoli

Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), PHB-Ecublens, CH-1015 Lausanne, Switzerland

Alfredo Pasquarello

Institut de Physique Théorique, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015 Lausanne, Switzerland

Original Article

Effect of biaxial strain on acceptor-level energies in ${In}_{y}$ ${Ga}_{1 - y}$ As/ ${Al}_{x}$ ${Ga}_{1 - x}$ As (on GaAs) quantum wells

J. P. Loehr and J. Singh

Phys. Rev. B 41, 3695 (1990)

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Vol. 42, Iss. 12 — 15 October 1990

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