Resonant Raman scattering by longitudinal-optical phonons in Zn1xMnxSe (x=0, 0.03, 0.1) near the E0 gap

W. Limmer, H. Leiderer, K. Jakob, W. Gebhardt, W. Kauschke, A. Cantarero, and C. Trallero-Giner
Phys. Rev. B 42, 11325 – Published 15 December 1990
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Abstract

The efficiency of resonant one- and two-LO-phonon Raman scattering in oriented cubic Zn1xMnxSe single crystals with x=0,0.03,0.1 is studied for incident photon energies near the E0 fundamental band gap. Absolute values of the Raman scattering efficiency (RSE) are determined for several backscattering configurations by using a sample substitution method and by correcting the measured intensities with respect to absorption, reflection, and refraction. The experimental data for one-LO-phonon scattering via deformation-potential and Fröhlich electron-phonon interaction are quantitatively compared with model calculations for the absolute RSE, where bound and continuum exciton states are considered as intermediate electronic states. Near resonance, strong LO-phonon intensities are measured in backscattering configurations where scattering via the deformation-potential and Fröhlich interaction is forbidden according to the standard Raman selection rules.

  • Received 7 May 1990

DOI:https://doi.org/10.1103/PhysRevB.42.11325

©1990 American Physical Society

Authors & Affiliations

W. Limmer, H. Leiderer, K. Jakob, and W. Gebhardt

  • Institut für Festkörperphysik, Universität Regensburg, Universitätsstrasse 31, D-8400 Regensburg, Federal Republic of Germany

W. Kauschke, A. Cantarero, and C. Trallero-Giner

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, Postfach 80 06 65, D-7000 Stuttgart 80, Federal Republic of Germany

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Issue

Vol. 42, Iss. 17 — 15 December 1990

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