Abstract
The dependence on the scattering wave vector of a nonequilibrium LO phonon distribution generated by hot-electron relaxation is measured in thick GaAs and As layers, and a 500-Å GaAs layer using picosecond Raman scattering in back and forward scattering geometries. The absence of nonequilibrium phonons in the thick samples, and their presence in the 500-Å sample, demonstrates that Raman-active LO phonons in have well-defined wave vectors and are not localized by alloy disorder.
- Received 22 June 1988
DOI:https://doi.org/10.1103/PhysRevB.38.5776
©1988 American Physical Society