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Unoccupied surface states revealing the Si(111)√3 √3 -Al, -Ga, and -In adatom geometries

J. M. Nicholls, B. Reihl, and John E. Northrup
Phys. Rev. B 35, 4137(R) – Published 15 March 1987
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Abstract

k-resolved inverse-photoemission spectroscopy has been used to determine the empty surface-state band structures of Si(111)√3 × √3 -Al, -Ga, and -In surfaces. The results are compared with first-principles pseudopotential total-energy and electronic-structure calculations for energy-minimized geometries of the filled- (T4) and the hollow- (H3) site adatom models. Good agreement between experiment and theory for the unoccupied surface-state band structures is found for the T4 model, which also has the lowest total energy.

  • Received 30 September 1986

DOI:https://doi.org/10.1103/PhysRevB.35.4137

©1987 American Physical Society

Authors & Affiliations

J. M. Nicholls and B. Reihl

  • IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland

John E. Northrup

  • Department of Physics, Arizona State University, Tempe, Arizona 85287

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Vol. 35, Iss. 8 — 15 March 1987

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