The interface excitations associated with the inversion layer of a metal-insulator-semiconductor structure are investigated. These excitations can be regarded as coupled modes whose components are the two-dimensional-electron-gas plasmon and the surface plasmon of the metal-insulator interface. The dependence of the coupled modes on the insulator thickness and the gate-electrode plasma frequency are studied.

• Received 2 December 1974

DOI:https://doi.org/10.1103/PhysRevB.11.4989