Abstract
We show theoretically that competing optical nonlinearities in a semiconductor étalon, with transverse effects included, result in complex spatiotemporal behavior. A theoretical framework is developed that explains many features of the oscillatory behavior. Numerical simulations exhibit kinks, switching waves, whole-beam, and edge oscillations. Simulations compare favorably with recent experiments.
- Received 16 July 1992
DOI:https://doi.org/10.1103/PhysRevA.47.1480
©1993 American Physical Society