Low-Temperature Thermal Resistance of n-Type Germanium

Robert W. Keyes
Phys. Rev. 122, 1171 – Published 15 May 1961
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Abstract

It is proposed that the scattering of phonons by donors in germanium at low temperatures results from the large effect of strain on the energy of an electron in a hydrogen-like donor state. A calculation of the thermal conductivity with this scattering mechanism is presented. Reasonable agreement with the following features of the observed thermal conductivity is obtained: the very large scattering power of donors, the difference between the scattering powers of antimony and arsenic, a temperature dependence of thermal conductivity stronger than T3, and a dependence of the scattering on number of occupied donors rather than on the total impurity concentration.

  • Received 21 November 1960

DOI:https://doi.org/10.1103/PhysRev.122.1171

©1961 American Physical Society

Authors & Affiliations

Robert W. Keyes

  • International Business Machines Research Laboratory, Poughkeepsie, New York

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Issue

Vol. 122, Iss. 4 — May 1961

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