Infrared Properties of Hexagonal Silicon Carbide

W. G. Spitzer, D. Kleinman, and D. Walsh
Phys. Rev. 113, 127 – Published 1 January 1959
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Abstract

Infrared transmission and reflectivity measurements from 1 to 25 μ (microns) have been made on several samples of green alpha (hexagonal) SiC. The residual ray bands have been observed for the ordinary and extraordinary rays. The resonance frequencies are 2.380×1013 sec1 (12.60 μ) and 2.356×1013 sec1 (12.73 μ), respectively. From the reflectivity the high-frequency dielectric constant is found to be 6.7. A careful analysis shows that the residual ray bands can be fitted within experimental error by the classical dispersion theory within the correct choice of the dispersion parameters. From the parameters the value 10.0 is obtained for the low-frequency dielectric constant. The effective charge is 0.94e. Complete description of the residual ray band for the extraordinary ray required, in addition to the main resonance, a weak resonance at 2.647×1013 sec1 (11.33 μ). A study on the effects of several different surface treatments shows the reflectivities reported here are an intrinsic property of the crystal. The room-temperature absorption coefficient as a function of wavelength in the range 1 to 10 μ has been determined from transmission measurements. A number of weak lattice bands are observed between 5 and 10 μ.

  • Received 15 September 1958

DOI:https://doi.org/10.1103/PhysRev.113.127

©1959 American Physical Society

Authors & Affiliations

W. G. Spitzer, D. Kleinman, and D. Walsh

  • Bell Telephone Laboratories, Murray Hill, New Jersey

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Vol. 113, Iss. 1 — January 1959

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