Photoluminescence from a modulation-doped Al0.33Ga0.67As/GaAs heterointerface under cyclotron resonance

K. Suzuki, K. Saito, K. Muraki, and Y. Hirayama
Phys. Rev. B 58, 15385 – Published 15 December 1998
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Abstract

Magnetophotoluminescence and change in photoluminescence (PL) intensities, due to far-infrared irradiation at the cyclotron resonance (CR) magnetic fields, in modulation-doped Al0.33Ga0.67As/GaAs single heterostructures are measured. The changes in PL intensities due to CR absorption strongly depend on the Landau-level filling factor (ν) and CR energy; i.e., the Landau-level separation. When ν<2 and CR energy is more than intersubband energy separation, luminescence from the ground subband is almost quenched and that from the second subband is greatly enhanced by CR absorption.

  • Received 29 June 1998

DOI:https://doi.org/10.1103/PhysRevB.58.15385

©1998 American Physical Society

Authors & Affiliations

K. Suzuki, K. Saito, K. Muraki, and Y. Hirayama

  • NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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Issue

Vol. 58, Iss. 23 — 15 December 1998

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