Rapid Roughening in Thin Film Growth of an Organic Semiconductor (Diindenoperylene)

A. C. Dürr, F. Schreiber, K. A. Ritley, V. Kruppa, J. Krug, H. Dosch, and B. Struth
Phys. Rev. Lett. 90, 016104 – Published 8 January 2003

Abstract

The scaling exponents α, β, and 1/z in thin films of the organic molecule diindenoperylene deposited on SiO2 under UHV conditions are determined. Atomic-force microscopy, x-ray reflectivity, and diffuse x-ray scattering were employed. The surface width displays power law scaling over more than 2 orders of magnitude in film thickness. We obtained α=0.684±0.06, β=0.748±0.05, and 1/z=0.92±0.20. The derived exponents point to an unusually rapid growth of vertical roughness and lateral correlations. We suggest that they could be related to lateral inhomogeneities arising from the formation of grain boundaries between tilt domains in the early stages of growth.

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  • Received 5 July 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.016104

©2003 American Physical Society

Authors & Affiliations

A. C. Dürr1,*, F. Schreiber1,2,†, K. A. Ritley1, V. Kruppa1, J. Krug3, H. Dosch1,2, and B. Struth4

  • 1Max-Planck-Institut für Metallforschung, Heisenbergstraße 3, 70569 Stuttgart, Germany
  • 2Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
  • 3Fachbereich Physik, Universität Essen, 45117 Essen, Germany
  • 4ESRF, BP 220, F-38043 Grenoble CEDEX, France

  • *Electronic address: Arndt.Duerr@mf.mpg.de
  • New address: Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QZ, England.

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Vol. 90, Iss. 1 — 10 January 2003

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