Understanding controls on interfacial wetting at epitaxial graphene: Experiment and theory

Hua Zhou, P. Ganesh, Volker Presser, Matthew C. F. Wander, Paul Fenter, Paul R. C. Kent, De-en Jiang, Ariel A. Chialvo, John McDonough, Kevin L. Shuford, and Yury Gogotsi
Phys. Rev. B 85, 035406 – Published 5 January 2012

Abstract

The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle θc = 73°) is substantially smaller than that of multilayer graphene (θc = 93°). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

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  • Received 2 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.035406

©2012 American Physical Society

Authors & Affiliations

Hua Zhou1,*, P. Ganesh2,†, Volker Presser3, Matthew C. F. Wander4, Paul Fenter1,‡, Paul R. C. Kent2, De-en Jiang5, Ariel A. Chialvo5, John McDonough3, Kevin L. Shuford4, and Yury Gogotsi3

  • 1Chemical Science and Engineering Division, Argonne National Laboratory, Argonne, IL 60439, USA
  • 2Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 3Department of Materials Science and Engineering and A.J. Drexel Nanotechnology Institute, Drexel University, Philadelphia, Pennsylvania 19104, USA
  • 4Department of Chemistry, Drexel University, Philadelphia, Pennsylvania 19104, USA
  • 5Chemical Science Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

  • *hzhou@anl.gov
  • ganeshp@ornl.gov
  • fenter@anl.gov

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Issue

Vol. 85, Iss. 3 — 15 January 2012

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