Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

C. Coluzza; E. Tuncel; J.-L. Staehli; P. A. Baudat; G. Margaritondo; J. T. McKinley; A. Ueda; A. V. Barnes; R. G. Albridge; N. H. Tolk; D. Martin; F. Morier-Genoud; C. Dupuy; A. Rudra; M. Ilegems

doi:10.1103/PhysRevB.46.12834

Rapid Communication

Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

C. Coluzza, E. Tuncel, J.-L. Staehli, P. A. Baudat, G. Margaritondo, J. T. McKinley, A. Ueda, A. V. Barnes, R. G. Albridge, N. H. Tolk, D. Martin, F. Morier-Genoud, C. Dupuy, A. Rudra, and M. Ilegems

Phys. Rev. B 46, 12834(R) – Published 15 November 1992

Abstract

We used optical pumping by the Vanderbilt free-electron laser and the technique of internal photoemission to measure with high accuracy the conduction-band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application to our knowledge of a free-electron laser to interface research.