The electron drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature. Polar-mode, deformation-potential acoustic, and piezoelectric scattering are included, as well as nonparabolic conduction bands and the corresponding electron wave functions. The drift mobility follows exactly from the assumed model by a simple iterative technique of solution which retains all the advantages of variational techniques without, however, the need for excessive mathematical detail. Piezoelectric scattering is shown to be considerable in GaAs for temperatures below 100 °K. The agreement between theory and experiment for GaAs is satisfactory.

• Received 30 March 1970

DOI:https://doi.org/10.1103/PhysRevB.2.1012