Electronic energy levels in Ga1xAlxSb alloys

H. Mathieu, D. Auvergne, P. Merle, and K. C. Rustagi
Phys. Rev. B 12, 5846 – Published 15 December 1975
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Abstract

Piezomodulation spectra are reported for Ga1xAlxSb alloys. E0, E0+Δ0, E1, E1+Δ1 direct transitions and the lowest indirect transitions are observed as a function of temperature and alloy composition. At room temperature, the direct-indirect crossover occurs at x=0.4±0.02. The bowing parameters for the E0 and E1 gaps are 0.69 and 0.28 eV, respectively, and that for ΓX indirect transitions is 0.48 eV. The spin-orbit splittings Δ0 and Δ1 are found to vary linearly with composition. Between 100 and 300°K the temperature dependence of various gaps is found to be linear. The coefficient of temperature dependence varies nearly linearly with composition. Theoretical calculations of bowing are examined. It is concluded that uncertainties in the material parameters of the pure compounds are the main cause which makes theoretical prediction of bowing parameters and crossover compositions rather uncertain.

  • Received 16 June 1975

DOI:https://doi.org/10.1103/PhysRevB.12.5846

©1975 American Physical Society

Authors & Affiliations

H. Mathieu, D. Auvergne, P. Merle, and K. C. Rustagi*

  • Centre d'Etudes d'Electronique des Solides, Université des Sciences et Techniques du Languedoc, 34060 Montpellier-Cedex, France

  • *Associé au Centre National de la Recherche Scientifique.

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Vol. 12, Iss. 12 — 15 December 1975

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