Theory of Optical Magneto-Absorption Effects in Semiconductors

Laura M. Roth, Benjamin Lax, and Solomon Zwerdling
Phys. Rev. 114, 90 – Published 1 April 1959
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Abstract

The theory of the effect of a magnetic field on the optical absorption in semiconductors is developed on the basis of the effective-mass approximation. For simple parabolic conduction and valence bands and a direct transition which is allowed at k=0, absorption peaks occur at energies above the zero-field gap. Since the selection rule for the transition is Δn=0 where n is the magnetic quantum number, the spacing between the peaks is the sum of the cyclotron frequencies for the two bands. For degenerate band edges, the spectrum is more complicated. A detailed treatment of the direct transition in germanium is given in which account is taken of the change in curvature of the bands away from k=0 and the results are in good agreement with the experimental measurements of Zwerdling, Lax, Roth, and Button. The k=0 conduction band mass is found to agree with predictions based on cyclotron resonance in the valence band. In addition, a gyromagnetic ratio for conduction electrons of -2.6 resulted from the calculations. The deviation from g=2.0 is due to spin-orbit interaction. In InSb the effect is much greater, the result being g=50. These are consistent with experimental results. For bands in which the transition probability vanishes at k=0, absorption peaks will also occur corresponding to Δn=±1 but absorption edges occur for Δn=0. In the case of indirect transitions, the absorption does not exhibit oscillations but consists of a series of "steps" as has been observed in Ge by Zwerdling, Lax, Roth, and Button.

  • Received 14 July 1958

DOI:https://doi.org/10.1103/PhysRev.114.90

©1959 American Physical Society

Authors & Affiliations

Laura M. Roth, Benjamin Lax, and Solomon Zwerdling

  • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts

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Issue

Vol. 114, Iss. 1 — April 1959

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