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Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

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Published 26 February 2016 • © CERN 2016
, , Citation M. Fernández García et al 2016 JINST 11 P02016 DOI 10.1088/1748-0221/11/02/P02016

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1 Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander, Spain

2 CERN, Organisation europénne pour la recherche nucléaire, CH-1211 Genève 23, Switzerland

3 Un. de Genève, DPNC, Quai Ernest-Ansermet 24, 1205 Genève, Switzerland

4 Department of Physics, Lancaster University, Lancaster, LA1 4YB, U.K.

Dates

  1. Received 10 November 2015
  2. Accepted 29 January 2016
  3. Published

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1748-0221/11/02/P02016

Abstract

High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 1015 neq/cm2 to decrease to the level of the unirradiated detector after 2 × 1016 neq/cm2.

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10.1088/1748-0221/11/02/P02016