Detection of inverse spin-Hall effect induced in Pt1−xMx (M = Cu, Au) thin films

H Nakayama; K Ando; K Harii; Y Kajiwara; T Yoshino; K Uchida; T Ota; E Saitoh

doi:10.1088/1742-6596/200/6/062014

Journal of Physics: Conference Series

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Detection of inverse spin-Hall effect induced in Pt_1−xM_x (M = Cu, Au) thin films

H Nakayama^1,2, K Ando^1,2, K Harii^1,2, Y Kajiwara^1,2, T Yoshino^1,2, K Uchida^1,2, T Ota^1,2 and E Saitoh^1,2,3

Published under licence by IOP Publishing Ltd
Journal of Physics: Conference Series, Volume 200, Spin Electronics Citation H Nakayama et al 2010 J. Phys.: Conf. Ser. 200 062014 DOI 10.1088/1742-6596/200/6/062014

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¹ Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

² Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan

³ PRESTO, Japan Science and Technology Agency, Sanbancho, Tokyo 102-0075, Japan

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Abstract

The inverse spin-Hall effect (ISHE) has been investigated in Pt_1−xM_x (M = Cu, Au) thin films with changing the concentration of M. We measured the electromotive force due to ISHE induced by the spin pumping in Ni₈₁Fe₁₉/Pt_1−xM_x (M = Cu, Au) bilayer systems. The experimental results show that the longitudinal conductivity dependence of Hall conductivity is described by σ_xy ∝ σ_xx^1.6. This implies that the mechanism of ISHE in the present systems can be attributed to the hopping conduction regime.

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Detection of inverse spin-Hall effect induced in Pt1−xMx (M = Cu, Au) thin films

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Abstract

Detection of inverse spin-Hall effect induced in Pt_1−xM_x (M = Cu, Au) thin films