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XMCD studies on Co and Li doped ZnO magnetic semiconductors

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Published 23 May 2008 Published under licence by IOP Publishing Ltd
, , Focus on Dilute Magnetic Semiconductors Citation Thomas Tietze et al 2008 New J. Phys. 10 055009 DOI 10.1088/1367-2630/10/5/055009

1367-2630/10/5/055009

Abstract

ZnO doped with a few per cent (<10%) of magnetic ions such as Co exhibit room temperature (RT) ferromagnetism, transforming it into a very promising candidate for future spin electronic applications. We present x-ray magnetic circular dichroism (XMCD) spectroscopy, which has been used in total electron yield, total fluorescence yield, and reflection mode to investigate the origin of ferromagnetism in such diluted magnetic semiconductor materials in a surface, bulk and interface sensitive way, respectively. We investigated three different types of samples: ZnO doped with 5% Co, artificially layered films, and layered films with additional co-doping of 10% Li. These films are prepared by pulsed laser deposition (PLD) and characterized by superconducting quantum interference device (SQUID) magnetometry. Extensive XMCD measurements at the Co L2,3 and the O K edges, done with a very good signal-to-noise ratio, have revealed only cobalt paramagnetism and non magnetic oxygen signatures at low and high temperatures. We do not see any element specific signature for ferromagnetism at all. By exclusion, our results suggest oxygen vacancies as the intrinsic origin for RT ferromagnetism in doped ZnO.

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10.1088/1367-2630/10/5/055009