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Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

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Published 28 March 2011 IOP Publishing Ltd
, , Citation Woojin Park et al 2011 Nanotechnology 22 205204 DOI 10.1088/0957-4484/22/20/205204

0957-4484/22/20/205204

Abstract

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

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10.1088/0957-4484/22/20/205204