A low-temperature-grown TiO₂-based device for the flexible stacked RRAM application

Flexible TiO₂ crossbar memory device arrays were fabricated on plastic substrates using amorphous titanium oxide thin films grown by the low-temperature plasma-enhanced atomic layer deposition method. Al/ TiO₂ /Al memory cells on polyethersulfone (PES) showed an enhanced endurance property (up to 10⁴ cycles) and low switching voltages compared to the cells on rigid substrates. The multi-stacked memory arrays were constructed by forming the additional Al/ TiO₂ /Al layer on the first memory device layer. Memory cells on each layer exhibited stable switching characteristics and mechanical robustness without interlayer cell-to-cell interference.