Doping dependence of transport and magnetic properties in

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Published under licence by IOP Publishing Ltd
, , Citation K Maiti et al 1997 J. Phys.: Condens. Matter 9 7507 DOI 10.1088/0953-8984/9/35/024

0953-8984/9/35/7507

Abstract

We report temperature dependences of transport and magnetic properties of controlled by charge carrier doping (x = 0.0 - 0.5). The system exhibits an insulator-to-metal transition concomitant with an antiferromagnetic-to-paramagnetic transition near x = 0.2 with increasing substitution. Disorder effects are found to influence the low-temperature transport properties of both insulating and metallic compositions near the critical concentration. At higher temperature resistivity of the metallic compositions has a dependence close to the critical concentration (x = 0.2 and 0.3) and thus provides an example of disordered Fermi liquid behaviour near the Mott transition. In contrast, at larger doping (x = 0.4 and 0.5) the resistivity exhibits a dependence. The molar susceptibility for the metallic samples indicates substantial enhancements due to electron correlation.

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