Abstract
Deformation potentials associated with the conduction band edge in Si are calculated using a pseudo-potential rigid ion model and the results of the band structure calculation made by Kleinman and Phillips in 1960. This simple method should give a good estimate for Θu, the shear component, but not necessarily for Θd. The calculated value of Θu, 8.4±0.3 eV, agrees well with experiment but there is no agreement for Θd.