Abstract
The authors review the current status of minority carrier lifetime in n-type and p-type (Hg, Cd)Te. This review includes a discussion of the relevant (Hg, Cd)Te recombination mechanisms and measurement techniques. The reported experimentally determined lifetimes were related to (Hg, Cd)Te material properties of carrier concentration, Shockley-Read-Hall centres, non-uniformities and dislocation densities.
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