Electron paramagnetic resonance studies of Si-SiO2 interface defects

K L Brower

doi:10.1088/0268-1242/4/12/002

Semiconductor Science and Technology

Electron paramagnetic resonance studies of Si-SiO₂ interface defects

K L Brower¹

Published under licence by IOP Publishing Ltd
Semiconductor Science and Technology, Volume 4, Number 12 Citation K L Brower 1989 Semicond. Sci. Technol. 4 970 DOI 10.1088/0268-1242/4/12/002

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¹ Sandia Nat. Labs., Albuquerque, NM, USA

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Abstract

This paper contains a review of electron paramagnetic resonance studies on P_b-type centres at the Si-SiO₂ interface. It includes a synopsis of studies on the atomic structure of P_b defects and the chemical kinetics whereby P_b centres are passivated with H₂.

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