Electron spin resonance in In_0.53Ga_0.47As

We report far-infrared photoconductivity measurements under magnetic field on a high-quality In_0.53Ga_0.47As epitaxial layer having a thickness of 5 mu m and a small lattice mismatch with the InP substrate ( Delta a/a=-7*10^-4). The transition between spin-split Landau levels 0⁺ and 0^- ('spin-flip' transition) could be observed, leading to a precise determination of the energy spacing between these two levels, and hence of the electron effective g-factor g_c. Comparison with a theoretical model taking into account interactions between conduction and valence bands in a k.p formalism (Weiler, M.H. et al, 1978, Phys. Rev. B 17 3269) leads to a value of g_c=-4.04+or-0.02, and Kane interband matrix element E_p=24.0+or-0.3 eV.