Abstract
Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by self-propagating high-temperature synthesis (SHS). The XRD analysis of the as-synthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC, which shrinks in the presence of Ni. The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2–18 GHz. The bandwidth of the reflection loss below −10 dB is broadened from 3.04 (for pure SiC) to 4.56 GHz (for Ni-doped SiC), as well as the maximum reflection loss of produced powders from 13.34 to 22.57 dB, indicating that Ni-doped SiC could be used as an effective microwave absorption material.