Abstract
A new planar InGaAs/InP avalanche photodiode (APD) is proposed and fabricated, which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector (DBR) to improve its responsivity. The fabricated APD exhibits a low dark current of less than 3nA at M = 10 and high responsivity of 0.92 A/W at M = 1. The gain bandwidth product of the device is above 80 GHz. The APD receiver exhibits a sensitivity of over −26dBm at BER = 10−12, which is sufficient for 10Gb/s communication systems.