Paper

Combinatorial optimization of Al-doped ZnO films for thin-film photovoltaics

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Published 6 August 2012 © 2012 IOP Publishing Ltd
, , Citation R E Treharne et al 2012 J. Phys. D: Appl. Phys. 45 335102 DOI 10.1088/0022-3727/45/33/335102

0022-3727/45/33/335102

Abstract

A rapid screening methodology for the development of transparent conducting oxides is presented. The methodology, based on a combination of spectrophotometry, ellipsometry and 4-point probe measurements, was used to map out the opto-electronic properties over a co-sputtered ZnO : Al2O3 film deposited from separate ceramic targets of ZnO and Al2O3. Clear distributions for the carrier density, ne, and mobility, μe, are determined as a function of wt%. Al2O3 content within the film. A minimum resistivity value of 7.6 × 10−4 Ω cm was achieved for a composition of 1.5 wt%. Al2O3.

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