Abstract
Electronic energy-loss calculations have been performed for incident ions with charges ranging from Z1=1 to Z1=50 channeling in Si, Ge, Al, Cu, Au and W crystals. The calculations are carried out within a model due to Cheshire (1969) which itself is an extension of a model employed by Briggs and Pathak (1974). Energy-loss Se against Z1 curves have been constructed with an electron-ion interaction potential of Thomas-Fermi form. The dependence of this Se against Z1 relation for a given target (fixed Z2) on the incident-ion speed nu 1 has also been found as well as the Se against Z2 dependence for fixed Z1 and nu 1. Predictions of the model for the Se against Z1 dependence (fixed Z2) are in fairly good general agreement with experiment, the experimental oscillatory structure of the curves being confirmed in the calculations.