Abstract
Two-dimensional magnetoplasmons in electron inversion layers of Si(100) have been investigated using MOS capacitors with submicron structured periodical gates. The amplitude and position of the magnetoplasmon resonance follows only in general the classical plasmon dispersion. At fields Bc/n(n=2,3,...) where the plasmon frequency is a multiple of the cyclotron frequency there are pronounced changes of the position and strong modifications of the amplitude of the plasmon resonance. The plasmon linewidth is not affected significantly by magnetic fields up to 12 T.