Electrodiffusion of shallow donors in CdS crystals

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, , Citation N E Korsunskaya et al 1980 J. Phys. C: Solid State Phys. 13 2975 DOI 10.1088/0022-3719/13/16/007

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1 Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR

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0022-3719/13/16/2975

Abstract

Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Lii and Cdi, drift in an electric field.

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