Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μm

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Published under licence by IOP Publishing Ltd
, , Citation K G Svantesson and N G Nilsson 1979 J. Phys. C: Solid State Phys. 12 3837 DOI 10.1088/0022-3719/12/18/029

0022-3719/12/18/3837

Abstract

Simultaneous determinations of the free-carrier absorption cross-section, the interband absorption coefficient, and the surface reflectivity, at the Nd:YAG laser wavelength 1.06 mu m and in the temperature interval 195-372K are reported, using a method developed previously. The influence of the free-carrier absorption is described by an analytical model which fits the experimental data very well. The values of the interband absorption coefficient measured with short high-intensity laser pulses agree with the literature values measured at low intensity. The free-carrier absorption cross-section sigma was found to be proportional to the absolute temperature, sigma = sigma n+ sigma p=1.7*10-20 T cm2.

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