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A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

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Published 6 November 2019 • © 2019 CERN
, , Citation G. Iacobucci et al 2019 JINST 14 P11008 DOI 10.1088/1748-0221/14/11/P11008

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1 Département de Physique Nucléaire et Corpusculaire, Université de Genève, Quai Ernest-Ansermet, Geneva, Switzerland

2 INFN Section of Roma Tor Vergata, Via della ricerca scientifica 1, Roma, Italy

3 IHP—Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder), Germany

4 CERN, CH-1211 Geneve 23, Switzerland

Dates

  1. Received 4 September 2019
  2. Accepted 21 October 2019
  3. Published

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1748-0221/14/11/P11008

Abstract

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 e− for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.

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© 2019 CERN. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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10.1088/1748-0221/14/11/P11008