The nature of magnetic interactions and electron transfer processes in systems are studied, by means of an ab initio embedded cluster model approach, using a difference dedicated configuration interaction (DDCI) procedure. For the undoped system, the crucial role played by the ligand to metal charge transfer (LMCT) configurations in the magnetic process makes necessary the use of an enlarged DDCI space, which explicitly takes account of the relaxation of these LMCT configurations. This procedure allows us to approach the experimental magnetic coupling constant value. In hole-doped systems, the value obtained for the electron transfer integral, t, is of 0.54–0.57 eV. The extra hole, characterized from the nature and occupation of differential natural orbitals, has a strong p character (approximately 50%) and is essentially localized in planes. These results are in agreement with the experimental evidence about these kinds of compounds. Neither the value of t nor the nature of the extra hole are seriously affected by the optimization of the orbitals used in the CI expansion. This suggests that a effective Hamiltonian is an adequate model to study the electronic properties of these systems.
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15 March 2000
Research Article|
March 15 2000
Accurate ab initio determination of magnetic interactions and hopping integrals in systems
Carmen J. Calzado;
Carmen J. Calzado
Departamento de Quimica Fisica, Universidad de Sevilla, E-41012 Sevilla, Spain
Laboratoire de Physique Quantique, IRSAMC, Univesité Paul Sabatier, F-31062 Toulouse Cedex, France
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Javier F. Sanz;
Javier F. Sanz
Departamento de Quimica Fisica, Universidad de Sevilla, E-41012 Sevilla, Spain
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Jean Paul Malrieu
Jean Paul Malrieu
Laboratoire de Physique Quantique, IRSMAC, Université Paul Sabatier, F-31062 Toulouse Cedex, France
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J. Chem. Phys. 112, 5158–5167 (2000)
Article history
Received:
July 13 1999
Accepted:
December 14 1999
Citation
Carmen J. Calzado, Javier F. Sanz, Jean Paul Malrieu; Accurate ab initio determination of magnetic interactions and hopping integrals in systems. J. Chem. Phys. 15 March 2000; 112 (11): 5158–5167. https://doi.org/10.1063/1.481093
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