In this work, we investigate a low temperature boron (B) and phosphorus (P) activation in amorphous using metal-induced crystallization technique. Eight candidates of metals (Pd, Cu, Ni, Au, Co, Al, Pt, and Ti) are used to crystallize the at a low temperature. Resistivity measurement, transmission electron microscopy, and x-ray diffraction analyses reveal behaviors of the metal-induced dopant activation process using the metals reacting with . It is revealed that Co achieves the highest B and P activation ratio in Ge below with a slow diffusion rate. This method can be utilized to activate gate, source, and drain of transistors on upper layers in three-dimensional integrated circuits, where low temperature processing is critical.
REFERENCES
1.
V.
Subramanian
and K. C.
Saraswat
, IEEE Trans. Electron Devices
45
, 1934
(1998
).2.
M.
Tada
, H.
Yamamoto
, T.
Takeuchi
, N.
Furutake
, F.
Ito
, and Y.
Hayashi
, J. Electrochem. Soc.
154
, D354
(2007
).3.
M.
Tada
, H.
Ohtake
, F.
Ito
, M.
Narihiro
, T.
Taiji
, Y.
Kasama
, T.
Takeuchi
, K.
Arai
, N.
Furutake
, N.
Oda
, M.
Sekine
, and Y.
Hayashi
, IEEE Trans. Electron Devices
54
, 797
(2007
).4.
C. O.
Chui
, H.
Kim
, D.
Chi
, B. B.
Triplett
, P. C.
McIntyre
, and K. C.
Saraswat
, Tech. Dig. - Int. Electron Devices Meet.
2002
, 437
.5.
Y. S.
Suh
, M. S.
Carroll
, R. A.
Levy
, A.
Sahiner
, and C. A.
King
, Mater. Res. Soc. Symp. Proc.
809
, B8
–11
(2004
).6.
J. -H.
Park
, M.
Tada
, H.
Peng
, and K. C.
Saraswat
, J. Appl. Phys.
104
, 064501
(2008
).7.
T. J.
Konno
and R.
Sinclair
, Mater. Sci. Eng., A
179–180
, 426
(1994
).8.
A. R.
Joshi
and K. C.
Saraswat
, IEEE Trans. Electron Devices
50
, 1058
(2003
).9.
S. -W.
Lee
, T. -H.
Ihn
, and S. -K.
Joo
, Appl. Phys. Lett.
69
, 380
(1996
).10.
S.
Gaudet
, C.
Detavernier
, P.
Desjardins
, and C.
Lavoie
, J. Vac. Sci. Technol. A
24
, 474
(2006
).11.
A. R.
Joshi
, T.
Krishnamohan
, and K. C.
Saraswat
, J. Appl. Phys.
93
, 175
(2003
).12.
C. O.
Chui
and K. C.
Saraswat
, in Germanium-Based Technologies: From Materials to Devices
, edited by C.
Claeys
and E.
Simoen
(Elsevier Science
, Amsterdam
, 2007
), pp. 132
–180
.13.
R. N.
Hall
and J. H.
Racette
, J. Appl. Phys.
35
, 379
(1964
).14.
S. M.
Sze
, Physics of Semiconductor Devices
(Wiley Interscience
, New York
, 1981
), p. 21
.© 2009 American Institute of Physics.
2009
American Institute of Physics
You do not currently have access to this content.