The authors report results of transport studies on high quality, fully epitaxial thin films grown via pulsed laser deposition on (110) substrates. Ferroelectric tests were conducted using symmetric and asymmetric device structures with either or Pt top electrodes and bottom electrodes. Comparison between these structures demonstrates the influence of electrode selection on the dominant transport mechanism. Analysis of film electrical response suggests Poole-Frenkel emission as the limiting leakage current mechanism in the symmetric structure. Temperature dependent measurements yield trap ionization energies of . No clear dominant leakage mechanism was observed for the asymmetric structure.
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