A formalism is presented to determine donor and acceptor concentrations in wurtzitic InN characterized by degenerate carrier concentration and mobility (μ). The theory includes scattering not only by charged point defects and impurities, but also by charged threading dislocations, of concentration For a 0.45-μm-thick InN layer grown on by molecular beam epitaxy, having determined by transmission electron microscopy, and determined by Hall effect measurements, the fitted values are and The identities of the donors and acceptors are not known, although a comparison of with analytical data, and also with calculations of defect formation energies, suggests that a potential candidate for the dominant donor is H.
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