Thin films of silicon carbide (SiC) have been deposited at 1400–1450 °C on vicinal and on-axis 6H-SiC(0001) substrates by gas-source molecular beam epitaxy using the gas system. Polytype control (6H- or 3C-SiC) was established by utilizing substrates of particular orientations. Residual, unintentionally incorporated nitrogen impurity levels were affected by changing the gas flow ratio, in agreement with the “site-competition epitaxy” model. In situ doping was achieved by intentional introduction of nitrogen and aluminum into the growing crystal.
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