The apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150 °C higher than N2. The dissociation of Mg–H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ⩽700 °C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900 °C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in GaN/InGaN double heterostructure.

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