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Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance

Numerical band-to-band tunnelling model for radio-frequency silicon tunnel diode with negative-differential resistance

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  • Author(s): K.R. Kim 1 ; B.-G. Park 2 ; R.W. Dutton 1
    • View affiliations
    • Affiliations: 1: Center for Integrated Systems (CIS), Stanford University, Stanford, USA
      2: Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, Korea
  • Source: Volume 44, Issue 23, 6 November 2008, p. 1379 – 1381
    DOI:  10.1049/el:20082737 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published

The low resistive band-to-band tunnelling (BTBT) model has been developed for radio-frequency (RF) silicon negative differential resistance (NDR) device simulation on the TCAD platform. The BTBT mechanism in a forward-biased tunnel junction is modelled based on a generation–recombination term in a continuity equation by considering a spatially varying electric field through the tunnelling distance. Using this model, DC/AC characteristics of silicon NDR devices have been successfully described on a numerical device simulation platform. The calculated speed index from the junction capacitance and peak tunnelling current of the tunnel diode shows good agreement with experiments.

Inspec keywords: elemental semiconductors; silicon; capacitance; tunnel diodes; semiconductor device models

Other keywords: tunnelling current; low resistive band-to-band tunnelling model; junction capacitance; radio-frequency silicon tunnel diode; Si; negative-differential resistance; forward-biased tunnel junction; generation-recombination term; tunnelling distance; numerical device simulation platform

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Junction and barrier diodes

References

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      • V.M. Franks , K.F. Hulme , J.R. Morgan . An allo process for making high current density silicon tunnel diode junctions. Solid-State Electron. , 343 - 344
    5. 5)
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