Comparison between carried-induced optical index, loss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 µm DOS application
Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n+-InP/i-InGaAsP/i-InP/p+-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λg=1.18 and 1.30 µm, and they were specially designed for 1.55 µm wavelength digital optical switch (DOS) applications. The Q1.30 based heterostructure shows the best potential for high-performance DOS.