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New experimental technique for fast and accurate MOSFET threshold extraction

New experimental technique for fast and accurate MOSFET threshold extraction

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Threshold voltage extraction for MOS devices is translated into the easier task of locating a minimum in a derived function of IDS and VGS. The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool instead of more costly optimisation based techniques.

References

    1. 1)
      • Karlsson, P.P., Jeppson, K.O.: `An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE MOS3 and BISIM models', Proc IEEE 1992 Int. Conf. on Microelectronic Tests Structures, March 1992, 5, p. 78–83.
    2. 2)
      • P.M. Karlsson , K.O. Jeppson . An efficient parameter extraction algorithm for MOS transistor models. IEEE Trans. , 9 , 2070 - 2076
    3. 3)
      • C. Ciofi , M. Macucci , B. Pellegrini . A new measurement method of MOS transistor parameters. Solid-State Electron , 8 , 1065 - 1069
    4. 4)
      • M.F. Hamer . First-order parameter extraction on enhancement silicon MOS transistors. IEE Proc. I , 2 , 49 - 54
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