Silicon boron delta doped FET: growth and fabrication
Silicon boron delta doped FET: growth and fabrication
- Author(s): R.G. Biswas ; N.L. Mattey ; P.J. Phillips ; S.M. Newstead ; T.E. Whall ; S. Taylor ; A. Gundlach
- DOI: 10.1049/el:19920422
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- Author(s): R.G. Biswas 1 ; N.L. Mattey 1 ; P.J. Phillips 1 ; S.M. Newstead 1 ; T.E. Whall 1 ; S. Taylor 2 ; A. Gundlach 3
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View affiliations
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Affiliations:
1: Department of Physics, University of Warwick, Coventry, UK
2: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK
3: Edinburgh Microfabrication Facility, University of Edinburgh, Edinburgh, UK
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Affiliations:
1: Department of Physics, University of Warwick, Coventry, UK
- Source:
Volume 28, Issue 7,
26 March 1992,
p.
667 – 669
DOI: 10.1049/el:19920422 , Print ISSN 0013-5194, Online ISSN 1350-911X
The fabrication of the first boron delta doped field-effect transistor is described. Molecular beam epitaxy was used to grow the delta doped layers and a low temperature processing schedule has been adopted, including the use of a plasma enhanced oxide growth to form the gate dielectric.
Inspec keywords: semiconductor doping; silicon; insulated gate field effect transistors; semiconductor growth; molecular beam epitaxial growth; elemental semiconductors
Other keywords:
Subjects: Epitaxial growth; Insulated gate field effect transistors
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