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Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA

Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA

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© The Institution of Electrical Engineers
Published

A circular buried microcavity 7 μm long and 6 μm in diameter has been realised. We obtained Ith = 6mA, ηd = 9% and peak power ≥1 mW at 20.5°C at single mode. The first CW operation of a GaAlAs/GaAs surface-emitting laser with Ith = 4.5 mA at 77 K was also realised.

Inspec keywords: semiconductor junction lasers; aluminium compounds; III-V semiconductors; gallium arsenide

Other keywords: threshold current; 1 mW; 6 mA; GaAlAs-GaAs; 9 percent; CW operation; circular buried microcavity; peak power; single mode; 77 K; surface-emitting laser; 4.5 mA; 20.5 degC

Subjects: Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors; II-VI and III-V semiconductors

References

    1. 1)
      • Kinoshita, S., Sakaguchi, T., Odagawa, T., Iga, K.: `GaAlAs/GaAs surface emitting laser with high reflective TiO', Proceedings of 6th conference on lasers and electro-optics, 1986, San Francisco, p. 282–283.
    2. 2)
      • K. Kishino , S. Kinoshita , S. Konno , T. Tako . Selective meltbacked substrate inner-stripe AlGaAs/GaAs lasers operated under room temperature CW condition. Jpn. J. Appl. Phys. , L473 - L475
    3. 3)
      • Kinoshita, S., Odagawa, T., Sakaguchi, T., Iga, K.: `Low threshold circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting laser', Proceedings of 10th IEEE international semiconductor laser conference, 1986, Kanazawa, p. 106–107.
    4. 4)
      • S. Uchiyama , K. Iga . GaInAsP/InP surface emitting injection laser with a ring electrode. IEEE J. Quantum Electron. , 1117 - 1118
    5. 5)
      • S. Kinoshita , T. Odagawa , K. Iga . A trial fabrication of circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting laser by using selective meltback method. Jpn. J. Appl. Phys. , 1264 - 1265
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