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GaAs-based 1.53 µm GaInNAsSb vertical cavity surface emitting lasers

GaAs-based 1.53 µm GaInNAsSb vertical cavity surface emitting lasers

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© The Institution of Engineering and Technology
Published

Electrically-pumped GaAs-based 1.53 µm vertical cavity surface emitting lasers operating in pulsed mode at room temperature and continuous wave (CW) up to 20°C are reported for the first time. The lasers employ a GaInNAsSb/GaNAs multiple quantum well active region, a selectively oxidised AlAs aperture and p- and n-doped Al(Ga)As/GaAs distributed Bragg reflectors. Typical devices have room-temperature pulsed threshold current densities of 8.3 kA/cm2 and threshold voltages of 5.5 V. CW threshold currents as low as 2.87 mA for a 7 µm aperture device were observed at 15°C.

Inspec keywords: aluminium compounds; laser beams; indium compounds; distributed Bragg reflectors; surface emitting lasers; quantum well lasers; III-V semiconductors; semiconductor quantum wells; optical pumping; gallium compounds; laser mirrors; wide band gap semiconductors; gallium arsenide

Other keywords: size 7 mum; p-doped distributed Bragg reflectors; n-doped distributed Bragg reflectors; wavelength 1.53 mum; temperature 15 degC; electrically-pumped GaAs-based vertical cavity surface emitting laser; multiple quantum well active region; pulsed mode operation; voltage 5.5 V; oxidised AlAs aperture; GaInNAsSb-GaNAs-AlAs-AlGaAs-GaAs; temperature 293 K to 298 K; continuous wave operation; threshold current density; threshold voltage

Subjects: Laser beam interactions and properties; Laser accessories and instrumentation; Optical lenses and mirrors; Laser beam characteristics and interactions; Laser resonators and cavities; Laser resonators and cavities; Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors

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